To cope with the rapid pace of device scaling, the semiconductor industry demands multiple data to be stored in a single memory cell which eventually results in high capacity (data storage) miniaturized memory. In this work development of highly repeatable, forming free low voltage, low power resistive switching phenomenon in TiO2 based Metal-Insulator-Metal device structure. The presented thesis, mainly, deals with performance optimization of resistive random access memory towards reliable future generation memory application. Effect on resistive switching performance due to variationin TiO2 deposition method (i.e. electrochemical anodization and thermal oxidation), metal electrodes was experimented. In addition post annealing effect on device performance also studied. It is postulated from result obtained from experiment that device didn't annealed at high temperature (more than 600°C) and Au electrode gives better memory performance than alloy metal electrode, Pd-Ag. A highly repeatable multilevel resistive switching Au/TiO2/Ti memory device is fabricated in this work.