Modeling and Characterization of RF and Microwave Power FETs

Name: Modeling and Characterization of RF and Microwave Power FETs
SKU: 1994820
Price: 333.99 AUD
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Hardback

Series:

The Cambridge RF and Microwave Engineering Series

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Description

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Author Biography:

Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. Jaime A. Pia is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.

Release date Australia

June 25th, 2007

Author

Audience

Professional & Vocational

Pages

380

Series

The Cambridge RF and Microwave Engineering Series

Dimensions

170x244x22

ISBN-13

9780521870665

Product ID

1994820

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