This is the first monograph to discuss in detail the current stage of development of nonpolar nitrides, with specific emphasis on the three main topics of crystal growth, properties and device studies. World-class researchers summarize their own recent achievements in their respective fields of expertise, covering both nonpolar and semipolar nitride materials. The bulk of the discussion in each chapter is related to the physical properties of the material obtained by the respective technique, in particular, defect density and properties of the defects in nonpolar nitrides. In addiiton, the optical and vibrational properties are also addressed in several chapters, as is progress in heterostructures, quantum wells and dots based on the AlGaN/GaN and the InGaN/GaN systems. Finally, an outlook of the application areas of the differently grown materials is presented in most chapters, together with the capabilities and limitations of the respective growth approaches used.
Table of Contents
INTRODUCTION 1. Nonpolar nitride materials and devices: Recent developments and present trends (T. Paskova) PART A: GROWTH 2. Nonpolar GaN films grown by HVPE (B. Haskell, P. Fini, S. Nakamura) 3. Nonpolar GaN quasi-wafers sliced from quasi-boules grown by high pressure solution and HVPE (I. Grzegory, M. Bochkowski, B. Lucnik, H. Teisseyre, C. Skierbiszewski, S. Porowski) 4. Heteroepitaxial growth of nonpolar AIN on SiC substrates by plasma-assisted molecular beam epitaxy (J. Suda) 5. MOVPE growth of AI(Ga, In)N on nonpolar/semipolar substrates (H. Amano) 6. GaN films and quantum wells with nonpolar surfaces: Growth and structural properties (O. Brandt) PART B: PROPERTIES 7. GaN films and quantum wells with nonpolar surfaces: Optical polarization properties (H. T. Grahn) 8. Luminescence properties of nonpolar GaN (P. P. Paskov, B. Monemar) 9. Optical phonons in GaN with nonpolar orientations: Anisotropic lattice distortion, phonon splitting, phonon deformation potentials and strain-free frequencies (V. Darakchieva, T. Paskova, M. Schubert) 10. Defects formed in nonpolar GaN grown on SiC and Al2O3: Structural perfection of laterally overgrown GaN layers (Z. Liliental-Weber, D. N. Zakharov) 11. Interfacial and defect structure of a-plane GaN grown on r-plane sapphire (R. Kroeger) PART C: NONPOLAR HETEROSTRUCTURES AND DEVICES 12. MOCVD grown nonpolar nitride heterostructures and devices (A. Chakraborty, U. Mishra) 13. MBE growth of nonpolar nitride low-dimensional structures (S. Founta, F. Rol, B. Gayral, B. Daudin) 14. Seminpolar InGaN/GaN quantum wells for highly functional light emitters (F. Funato, Y. Kowakami, Y. Narukawa, T. Mukai)
Tanya Paskova has obtained her academic degrees from Sofia University, Bulgaria and Linkoping University, Sweden. She held posts as a visiting lecturer and associate professor at Linkoping University, focussing on development of GaN epitaxial growth for substrate applications and basic study of nitride materials and structures. Dr Paskova has authored more than 200 scientific papers, reviews, chapters, and invited talks at international forums and university seminars and is one of the editors of a book entitled 'Nitrides as seen by the Technology'. She is a referee for several prestigious physics journals and a member of PhD evaluation and workshop organization committees.