Spectroscopy of Semiconductor Microstructures

Name: Spectroscopy of Semiconductor Microstructures
SKU: 21699714
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NATO Science Series: B:

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Description

IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.

Release date Australia

March 3rd, 2013

Audience

Professional & Vocational

Contributors

Edited by Annalisa Fasolino
Edited by Gerhard Fasol
Edited by Paolo Lugli

Illustrations

215 Illustrations, black and white; XIV, 667 p. 215 illus.

Pages

667

Series

NATO Science Series: B:

Dimensions

178x254x35

ISBN-13

9781475765670

Product ID

21699714

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Spectroscopy of Semiconductor Microstructures

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