Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

By:

Peter Pichler

Format:

Paperback / softback

Series:

Computational Microelectronics

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Description

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

Release date Australia

November 1st, 2012

Author

Peter Pichler

Audience

Professional & Vocational

Edition

Softcover reprint of the original 1st ed. 2004

Illustrations

40 Illustrations, black and white; XXI, 554 p. 40 illus.

Pages

554

Series

Computational Microelectronics

Dimensions

178x254x30

ISBN-13

9783709172049

Product ID

22340380

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