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Strain-Induced Effects in Advanced MOSFETs by Viktor Sverdlov
Strain-Induced Effects in Advanced MOSFETs by Viktor Sverdlov
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Strain-Induced Effects in Advanced MOSFETs

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Description

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Release date Australia
August 23rd, 2016
Audience
  • Professional & Vocational
Edition
Softcover reprint of the original 1st ed. 2011
Illustrations
xiv, 252 p.
Pages
252
ISBN-13
9783709119334
Product ID
28500667

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